Reversibility of defect formation during oxygen‐assisted electron‐beam‐induced etching of graphene

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EarlyView Article

  • Published: Dec 6, 2017
  • Author: Guillaume Pillet, Victor Freire‐Soler, Marc Nuñez Eroles, Wolfgang Bacsa, Erik Dujardin, Pascal Puech
  • Journal: Journal of Raman Spectroscopy

Abstract

We explore the defect formation on single‐layer graphene partially suspended over a microcavity upon etching by a focused electron beam in a reactive oxygen atmosphere. The formation of oxygenated defects in an area of several μm2 around the cut is studied by Raman spectroscopy. The narrow symmetric Raman D band has the same bandwidth as the G band line width of supported graphene. For suspended graphene, the D bandwidth is larger. From the ratio of the intensity of the Raman D and D′ band (ID/ID), it is concluded that mainly sp3‐type defects are formed on supported graphene and more defects with a different spectral signature are formed on suspended graphene. Annealing in reductive H2/Ar atmosphere is found to remove bonded oxygen on supported graphene, whereas on suspended graphene with higher density of defects, defects are removed only partially.

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