Journal Highlight: Resonance Raman of oxygen dangling bonds in amorphous silicon dioxide

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  • Published: Mar 6, 2017
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thumbnail image: Journal Highlight: Resonance Raman of oxygen dangling bonds in amorphous silicon dioxide

A resonance Raman band induced by ionizing radiation in amorphous silicon dioxide, which can be detected under ultraviolet laser excitation, has been assigned to oxygen dangling bonds.

Resonance Raman of oxygen dangling bonds in amorphous silicon dioxide

Journal of Raman Spectroscopy, 2017, 48, 230-234
D. Di Francesca, A. Boukenter, S. Agnello, A. Alessi, S. Girard, M. Cannas and Y. Ouerdane

Abstract: We investigate the origin of a resonance Raman band induced by ionizing radiation in amorphous silicon dioxide (silica glass), which can be detected under ultraviolet laser excitation. A silica sample, rich of oxygen-excess related defects, was prepared by treating some length of a pure-silica-core multimode fiber in an O2 atmosphere (at high temperature and pressure) and by irradiating it with X-rays at 10 MGy(SiO2) dose. A micro-Raman study revealed a gaussian band peaking at 896 cm−1 with a full width at half maximum of 32 cm−1, which could be detected by exciting the sample with the 325-nm line of a HeCd laser. This spectral feature is absent in the Raman spectra performed with the 442-nm line of the same laser. On the basis of several experimental evidences and some complementary literature data, the 896 cm−1 band is assigned to a resonance Raman scattering of oxygen dangling bonds, often called non-bridging oxygen hole centers.

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